METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to be capable of easily removing polysilicon residues without damage of a lower electrode. CONSTITUTION: A capacitor oxide layer(44) is formed on a semiconductor substrate(40) with a plug(42). A cylindrical hole is formed by selectively etching the capacitor oxide layer. A lower electrode(45) is formed by depositing a polysilicon layer on the cylindrical hole. A gap-filling layer is filled in the cylindrical hole. The lower electrode is isolated by the first polishing of the gap-filling layer and the lower electrode to expose the capacitor oxide layer(44) using the first slurry for polishing oxide. Then, silicon residues are removed by the second polishing using the second slurry for polishing silicon.