| 摘要 |
PURPOSE: A method for forming a trench isolation layer of a semiconductor device is provided to restrain the formation of moat at edge portions of the isolation layer by oxidizing a liner nitride layer. CONSTITUTION: A trench mask pattern including a pad oxide and nitride layer(21,22) is formed on a silicon substrate(20). A trench is formed by selectively etching the exposed substrate. A liner nitride layer(24) is formed on the entire surface of the resultant structure. The top corner portion of the liner nitride layer is oxidized, thereby forming an oxidized liner nitride layer(24a). Then, an isolation layer is formed by filling an insulating layer with the trench and planarizing. The pad nitrided layer(22) is then removed.
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