| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of reducing parasitic capacitance between metal lines used as a data bus line. CONSTITUTION: A capacitor consisting of a lower electrode, a dielectric film and an upper electrode(43) is formed on a semiconductor substrate(31). The first insulating layer(44) is formed on the resultant structure. A contact hole(45) is formed to expose the upper electrode. A metal interconnection(46) including the first metal line connected to the upper electrode and the second metal lines is formed on the first insulating layer. An insulating spacer(47) is formed at both sidewalls of the metal interconnection. The second insulating layer(48) is formed so as to generate voids(48a) between the insulating spacers.
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