| 摘要 |
PURPOSE: A post-treatment method of a tantalum oxide layer and a method for manufacturing a capacitor using the same are provided to be capable of preventing the increase of leakage current due to compensation of oxygen vacancy. CONSTITUTION: A tantalum oxide layer is deposited on a substrate by using reaction gases containing tantalum source and oxygen(21). Then, post-treatment processing is performed so as to remove oxygen vacancy and impurities in the tantalum oxide layer(22). That is, a source containing chlorine, such as TCA(C2H3Cl3) is added to atmosphere gas including oxygen and annealed by furnace at the temperature of 600-800°C.
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