| 摘要 |
PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to effectively prevent the increase of effective permittivity, the degradation of EM(ElectroMigration) and the generation of defects by selectively forming a diffusion barrier layer on a copper line. CONSTITUTION: An insulating layer(28) having a hole is formed on a semiconductor substrate(21). The hole is filled with a copper film. By blanket-etching of the copper film, a copper line(26) is formed and the substrate is planarized. A diffusion barrier layer(27) is selectively formed on the copper line(26). The diffusion barrier layer(27) is formed by the following steps of absorbing selectively chemical enhancer on the copper line, depositing a metal film on the copper line, and oxidizing the metal film.
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