| 摘要 |
PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to be capable of preventing increase of contact resistance due to a barrier metal of TiN and simplifying manufacturing processes. CONSTITUTION: Contact holes are formed to expose desired conductive layers(41,44) through interlayer dielectrics(42,45). A TiN layer(46) as a barrier metal film is formed on the entire surface of the resultant structure including the contact holes by using TiCL4 as a source gas. Then, the contact holes is filled with a tungsten film, thereby forming a tungsten plug(47a).
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