| 摘要 |
PURPOSE: A CAM cell program/erase verification circuit of a flash memory is provided to perform program/erase verification using a CAM cell scan read operation and to read accurate CAM data by performing the verification through a test mode and assuring a detection margin. CONSTITUTION: The CAM cell program/erase verification circuit of a flash memory uses a CAM cell control circuit comprising a CAM cell read control part reading a CAM cell and a CAM cell program/erase control part performing program/erase to the CAM cell, by receiving power supply voltages and a control signals. A CAM cell verification voltage applying part(10) applies a voltage higher than a voltage applied during a read operation to a gate terminal of the CAM cell during program verification and applied a voltage lower than a read voltage to the gate terminal during erase verification, according to a verification control signal. A verification time control part(30) controls program/erase verification time by the verification control signal and a verification control timing signal, in order to receive a signal to verify program/erase from the CAM cell. The verification control time is shorter than a time used while the CAM cell is read.
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