| 摘要 |
PURPOSE: A method for forming a capacitor of a semiconductor device is provided to prevent the damage of guard ring patterns by binding the guard ring patterns and adjacent dummy cells in a predetermined interval. CONSTITUTION: An interlayer dielectric is formed on a semiconductor substrate(200). A contact plug(202) is formed within the interlayer dielectric. A wet-etch barrier layer(204) is formed on the semiconductor substrate(200). An insulating oxide layer(206) is formed on the wet-etch barrier layer(204). A photoresist pattern is formed to bind a guard ring pattern of a capacitor and an adjacent dummy cell. An opening portion(210) is formed by etching the insulating oxide layer(206) and the wet-etch barrier layer(204). A conductive layer(212) for bottom electrodes is formed on the semiconductor substrate(200). The opening portion(210) is filled with a gap-fill layer. The guard ring pattern of a bottom electrode is formed by planarizing the gap-fill layer and the conductive layer(212). The gap-fill layer and the insulating oxide layer are removed.
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