发明名称 |
METAL-INSULATOR-METAL(MIM) CAPACITOR HAVING CONSTANT CAPACITANCE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME |
摘要 |
PURPOSE: An MIM(Metal-Insulator-Metal) capacitor having a constant capacitance and a semiconductor device including the same are provided to be capable of considerably improving the stability of the semiconductor device. CONSTITUTION: An MIM capacitor having a constant capacitance is provided with the first capacitor(310) and the second capacitor(320). The first capacitor is formed by sequentially depositing the first lower metal layer(311), the first dielectric layer(312), and the first upper metal layer(313). The second capacitor is formed by sequentially depositing the second lower metal layer(321), the second dielectric layer(322), and the second upper metal layer(323). At this time, the second lower metal layer is electrically connected with the first upper metal layer and the second upper metal layer is electrically connected with the first lower metal layer. |
申请公布号 |
KR20040008851(A) |
申请公布日期 |
2004.01.31 |
申请号 |
KR20020042573 |
申请日期 |
2002.07.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JANG, DONG YEOL;LEE, SU CHEOL |
分类号 |
H01L27/04;H01G4/228;H01G4/33;H01G4/38;H01L21/02;H01L21/822;H01L23/522;H01L27/00;H01L27/01;H01L27/08;H01L27/108;H01L29/92;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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