METHOD FOR FABRICATING HIGH DIELECTRIC LAYER OF SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

摘要

PURPOSE: A method for fabricating a high dielectric layer of a semiconductor device is provided to form a thin film of a high dielectric constant and prevent a leakage current of a silicon nitride layer by sequentially controlling the thickness of a metal oxide layer and a metal silicate layer. CONSTITUTION: The first metal layer is formed on a silicon substrate(300). A rapid thermal process is performed on the substrate in an oxygen atmosphere at the first temperature to oxidize the first metal layer by a predetermined thickness from the surface of the first metal layer so that the first metal oxide layer of a high dielectric constant is formed. A stack structure composed of the second metal layer and the first metal oxide layer that are not oxidized is formed on the substrate. A heat treatment process is performed on the substrate including the structure in a furnace of an oxygen atmosphere at the second temperature higher than the first temperature. The second metal layer which is a predetermined thickness from the surface of the substrate is a metal silicate layer. The rest of the second metal layer is a metal oxide layer. A dielectric layer in which a metal silicate layer and the second metal oxide layer are stacked is formed on the substrate.