| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve contact resistance and to reduce CD(Critical Dimension) of a gate electrode by previously forming a landing plug before forming the gate electrode. CONSTITUTION: Line patterns(33a) are formed on a substrate(31) by selectively etching the first conductive layer. The first nitride spacer(37) is formed at both sidewalls of the line patterns. A gate oxide layer(39) is then grown on the exposed substrate. The second conductive layer(41) is formed on the gate oxide layer and recessed. After a metal film(43) is formed on the resultant structure, a metal gate electrode including the tungsten film and the second conductive layer is formed. The second nitride layer as a passivation layer is formed on the metal gate electrode.
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