METHOD FOR FABRICATING MAGNETIC RAM

摘要

PURPOSE: A method for fabricating a magnetic RAM is provided to improve characteristics and reliability of a device by improving electrical characteristics of the device. CONSTITUTION: According to the method, a connection layer(43) connected to a semiconductor substrate(41) through a bottom insulation layer is formed. A MTJ(Magnetic Tunnel Junction) material layer is deposited on the connection layer. A MTJ cell(53) is formed by patterning the above MTJ material layer by an exposure and developing process using a MTJ cell mask. An interlayer insulation film(55) planarizing the whole top surface is formed. A photoresist is deposited on the interlayer insulation film and then an etch stop layer is formed only on an upper part of the cell part. A contact hole(63,65) revealing the MTJ cell and the connection layer is formed by a photo lithography process using a contact mask. And a metal interconnection(67) connected with the MTJ cell and the connection layer is formed through the above contact hole.