| 摘要 |
PURPOSE: A method for forming a capacitor of a semiconductor device is provided to be capable of preventing the loss and damage of a storage node for improving the operation characteristic and reliability of the semiconductor device by using a capping insulating layer. CONSTITUTION: The first interlayer dielectric having a storage node contact plug(65), is formed at the upper portion of a semiconductor substrate(51). A storage node conductive layer is formed on the entire surface of the resultant structure. A storage node is formed by carrying out a photolithography process at the storage node conductive layer using a storage node mask. A capping insulating layer(71) is formed along the upper surface of the resultant structure. The second interlayer dielectric(73) is formed at the upper portion of the resultant structure.
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