| 摘要 |
PURPOSE: A layout of an ESD(Electro-Static Discharge) protection device is provided to be capable of improving the characteristics of ESD by increasing the surface area of a transistor. CONSTITUTION: A layout of an ESD protection device is provided with an active region(110) for defining a transistor, and a gate region(122) formed into a circular type or polygonal type line structure at the upper portion of the active region. The layout of the ESD protection device further includes a source region(130) formed at the inner portion of the circular or polygonal type gate region, and a drain region(140) formed at the outer portion of the circular or polygonal type gate region.
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