METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing the deterioration of a refresh function at a DRAM(Dynamic Random Access Memory) by using an HTO(High Temperature Oxide). CONSTITUTION: After a plurality of lower metal lines are formed at the upper portion of a semiconductor substrate(31), an interlayer dielectric(43) is formed at the upper portion of the resultant structure. At this time, each metal line includes a hard mask(37). Then, a landing plug contact hole is formed at the interlayer dielectric. After an HTO layer(47) is formed at the upper portion of the resultant structure as an etching barrier, a conductive layer is formed on the entire surface of the resultant structure. A recess process is carried out at the conductive layer. A plurality of landing plugs are formed at the resultant structure by carrying out an etching process using the hard mask as an etch stop layer.