FERROELECTRIC MEMORY DEVICE HAVING EXTENDED PLATE LINE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A ferroelectric memory device having an extended plate line and a fabricating method thereof are provided to increase a degree of integration by connecting one plate line to top electrodes of ferroelectric capacitors. CONSTITUTION: A ferroelectric memory device having an extended plate line includes a bottom interlayer dielectric(74), a plurality of ferroelectric capacitors(82), a plurality of oxygen barrier spacers(83a), a top interlayer dielectric(89,93), and a plurality of plate lines(97). The bottom interlayer dielectric(74) is formed on a semiconductor substrate(51). The ferroelectric capacitors(82) are arrayed in rows and columns on the bottom interlayer dielectric. The oxygen barrier spacers(83a) are arrayed on sidewalls of the ferroelectric capacitors. The top interlayer dielectric(89,93) is laminated on the entire surface of the semiconductor substrate(51). The plate lines(97) are arrayed within the top interlayer dielectric.