| 摘要 |
PURPOSE: A method for fabricating a magnetic RAM is provided to improve characteristics and reliability of the device by controlling the amount of added impurity and controlling electrical conductivity. CONSTITUTION: According to the method for fabricating a magnetic RAM, a magnetic pinned layer(35) is formed on an upper part of a connection layer(33). A tunnel barrier layer(37) is formed on an upper part of the magnetic pinned layer with a semiconductor thin film which is thin film of intrinsic semiconductor. And a MTJ(Magnetic Tunnel Junction) cell is formed with a process of forming a magnetic free layer(39) on an upper part of the tunnel barrier layer.
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