| 摘要 |
PURPOSE: A synchronous SRAM exchangeable memory capable of burst access driving using a DRAM cell and a driving method thereof are provided to be exchanged with a SRAM and is synchronized to an external clock signal. CONSTITUTION: A SRAM exchangeable memory includes a DRAM memory array, and a data input/output part(75) controlling data input/output to the DRAM memory array from the external. An address input part(15) inputs a row address and a column address of a present frame in a section where a valid address signal is enabled, and the addresses are synchronized to an external clock signal. A burst address generation part(30) generates a burst address varying sequentially as to the column address, and the variation of the burst address is synchronized to the external clock signal. A state control part(20) generates a burst enable signal enabling the burst address generation part, and controls the data input/output part, and generates a wait indication signal of the first logic state when an access operation of a prior frame as to the memory array is being performed. And a refresh control part(55) controls to perform a refresh operation as to the DRAM memory array, and if the burst access operation is being performed as to the DRAM memory array, controls to perform the refresh operation after completing the burst access operation.
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