| 摘要 |
PURPOSE: A method for forming a thin film and a method for forming a capacitor and a transistor using the same are provided to improve a dielectric constant and reduce the amount of leakage current by using an atomic layer deposition method. CONSTITUTION: The first reaction material(2) including a tantalum precursor and a titanium precursor is introduced to a substrate(1). The first reaction material(2) is partially absorbed on the upper surface of the substrate(1) by introducing the first reaction material to the substrate. The second reaction material(6) including oxygen is introduced to the substrate. A solid material(8) is formed on the upper surface by absorbing partially the second reaction material(6) on the upper surface of the substrate. The tantalum precursor is formed with one material selected from a group including TaCl5, Ta(OC2H5)5, Ta(OC4H9)5, Ta(OC2H5)(OC3H7)4, and TAT-DMAE. The titanium precursor is formed with one material selected form a group including TiCl4, Ti(OCH3)4, Ti(OC2H5)4, Ti(OC3H7)4, Ti(OC4H9)4, Ti(OC2H5)(OC3H7)4, Ti(OC3H7)2(O2C11H19)2, and Ti(OEt)2(DMAE)2.
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