METHOD FOR FORMING MIM CAPACITOR

摘要

PURPOSE: A method for forming a MIM capacitor is provided to prevent an undesirable etching effect of a metal layer for bottom electrode by forming an insulating layer on the metal layer for bottom electrode and etching a dielectric layer. CONSTITUTION: The first metal layer and an insulating layer(25) are formed on a semiconductor substrate(21). A trench for exposing the first metal layer is formed by patterning the insulating layer. A dielectric layer(29) and the second metal layer are formed on a surface of the trench and the insulating layer(25). A mask pattern for limiting a capacitor forming region is formed on the second metal layer. A top electrode(31a) is formed by etching the second metal layer and the dielectric layer. The mask pattern is removed. A bottom electrode(23a) is formed by patterning the insulating layer and the first metal layer.