CLEANING METHOD OF CHEMICAL VAPOR DEPOSITION CHAMBER

摘要

PURPOSE: A cleaning method of a CVD(Chemical Vapor Deposition) chamber is provided to be capable of improving cleaning efficiency and restraining by-product from being generated at the inner portion of the chamber. CONSTITUTION: A substrate is loaded at the inner portion of a chamber(S50). A titanium layer is deposited at the upper portion of the substrate(S52). The substrate is unloaded from the chamber(S54). The first plasma process is carried out at the inner portion of the chamber by using the first gas containing N and H(S56). A cleaning process is carried out at the inner portion of the chamber by in-situ(S58). The second plasma process is carried out at the inner portion of the chamber by using the second gas containing N and H(S60).