METHOD FOR DEVELOPING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for developing a semiconductor device is provided to enhance the performance and the yield of the semiconductor device by improving a profile and a process margin of a chemically amplified photoresist pattern having high contrast and obtaining an uniform CD(Critical Dimension). CONSTITUTION: A chemically amplified photoresist composition for KrF is coated on an upper surface of a semiconductor substrate in order to form a photoresist layer. The thickness of the chemically amplified photoresist composition for KrF is 3500 angstrom. An exposure process and a bake process for the photoresist layer are performed. A developing process is performed during 20 to 50 seconds by supplying the developing solution on an upper surface of the exposed photoresist layer. The developing solution is formed with tetramethyl ammonium hydroxide. A rinse process and a dry process are performed.