| 摘要 |
PURPOSE: A method for forming a trench type isolation layer of a semiconductor device is provided to be capable of achieving trench-top-corner rounding without using an additional process. CONSTITUTION: A pad oxide layer(21) and a pad nitride layer are sequentially formed on a silicon substrate(20). A photoresist pattern(23) is formed to open a trench region. The pad nitride layer is dry-etched, wherein the pad nitride layer of the trench region remains partially. The remaining pad nitride layer is etched to expose the pad oxide layer(21), thereby forming a pad nitride pattern(22) having a sloped pattern. A trench is formed by selectively etching the exposed pad oxide layer and the substrate. At this time, the top corner portion of the trench is rounded according to the sloped pad nitride pattern. Then, an oxide layer is filled in the trench.
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