| 摘要 |
PURPOSE: A method for forming a self-aligned contact hole of a semiconductor device is provided to be capable of preventing contact failure. CONSTITUTION: Conductive lines(140) including a conductive layer(120) and a hard mask(130) are formed on a semiconductor substrate(100). A spacer(150) is formed at both sidewalls of the conductive line. An interlayer dielectric is formed to fill the space between the conductive lines. A mask pattern is formed to define a contact hole formation region. A buffer spacer(195) is formed at both sidewalls of the mask pattern. A self-aligned contact hole(200) is then formed by etching the interlayer dielectric using the buffer spacer and the mask pattern as a mask.
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