| 摘要 |
PURPOSE: A method for forming a semiconductor memory device is provided to be capable of preventing short between a bitline and a storage node contact plug. CONSTITUTION: The first interlayer dielectric(105) with a contact plug(110) is formed on a substrate(100). After forming the second interlayer dielectric, a bitline structure(140) is formed. An insulating layer(145) as a spacer and the third interlayer dielectric(150) are sequentially formed on the bitline structure. A mask pattern(155) with a relatively wide line-width compared to the bitline structure is formed on the resultant structure. A storage node contact hole(160) is formed to expose the contact plug by etching the third interlayer dielectric, the insulating layer(145) and the second interlayer dielectric using the mask pattern as a mask.
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