| 摘要 |
PURPOSE: An image sensor with high sensitivity is provided to be capable of improving charge transfer efficiency. CONSTITUTION: An image sensor includes an active region(ACT) and a field region(Field). The image sensor is provided with a photodiode(PD), a gate(Tx) of a transfer transistor and a sensing diffusion node(FD) in the active region. One end and the other end of the gate(Tx) are contacted with the photodiode(PD) and the sensing diffusion node(FD), respectively. The one end of the gate contact with the sensing diffusion node has a desired angle(α).
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