| 摘要 |
PURPOSE: A method for forming an interlayer dielectric of a semiconductor device is provided to be capable of improving the planarization and the insulating property between a gate and a bitline and. CONSTITUTION: A gate(12) is formed on a semiconductor substrate(10). An oxide layer(15) is formed at one side of the gate, and a landing polysilicon layer(16) is formed at the other side of the gate. At this time, dishing is generated on the surface of the landing polysilicon layer and the oxide layer. An USG(Undoped Silicate Glass) layer(17) as an interlayer dielectric is formed on the resultant structure to fill the dishing by CVD using SiH4+H2O2 as a reaction source. Plasma or annealing treatment is performed to densify and planarize the USG layer(17).
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