| 摘要 |
PURPOSE: A method of forming an ion implantation mask for photo diodes is provided to enhance the reliability and the yield by preventing the permeation of ions to a bottom part of a gate electrode in an N-well ion implantation process. CONSTITUTION: An isolation layer(21) is formed on a semiconductor substrate(20). A gate insulating layer, a polysilicon layer(22), the first insulating layer(23), and the second insulating layer are sequentially deposited on the isolation layer(21). The second insulating layer and the first insulating layer(23) are partially removed by performing a patterning process. The polysilicon layer(22) and the gate insulating layer are patterned by using the second insulating layer and the first insulating layer as etch masks. A photoresist layer(26) as an ion implantation mask is formed on a predetermined region of the semiconductor substrate(20).
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