| 摘要 |
PURPOSE: A semiconductor device with triple well structure and a method for manufacturing the same are provided to be capable of improving threshold voltage and refresh property. CONSTITUTION: A triple well including the first p-well(43), a deep n-well(44) and the second p-well(45) is formed in a substrate(31). A gate oxide layer(46) and a gate electrode(47) are sequentially formed on the substrate. A source/drain region(48) is formed in the second p-well(45). A threshold voltage ion implantation region(52) is formed at lower of the gate electrode and surrounded to the source/drain region. At this time, a punch prevention region(53) is formed at lower portion of the source/drain region.
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