发明名称 ORGANIC ANTIREFLECTIVE COATING COMPOSITION AND FORMATION METHOD OF PHOTORESIST PATTERN USING THE COMPOSITION
摘要 PURPOSE: An organic antireflective coating composition, a method for forming a photoresist pattern by using the composition and a semiconductor device prepared by the method are provided, to remove the standing wave and to improve the uniformity of a photoresist pattern by minimizing the reflectance of an antireflective coating. CONSTITUTION: The organic antireflective coating composition comprises a crosslinking agent for allowing a formed antireflective coating to have the crosslinked structure; a light absorbent having a high absorbance in the wavelength range of an exposure light source; a thermal acid generator; an organic solvent; and the poly(dimethylsiloxane) having a molecular weight of 14,000-21,000 represented by the formula 1. Preferably the light absorbent is the poly(vinyl phenol) represented by the formula 2; and the crosslinking agent is the polymer having a molecular weight of 3,000-100,000 represented by the formula 3, wherein R1 and R2 are a linear or branched substituted alkyl group of C1-C10, R3 is H or CH3.
申请公布号 KR20040008434(A) 申请公布日期 2004.01.31
申请号 KR20020042071 申请日期 2002.07.18
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JUNG, JAE CHANG;SHIN, GI SU
分类号 G03F7/11;C08F2/46;C08L83/04;C09D183/04;G03F7/075;G03F7/09;H01L21/027;(IPC1-7):G03F7/075 主分类号 G03F7/11
代理机构 代理人
主权项
地址