METHOD FOR MANUFACTURING HIGH QUALITY GaN SUBSTRATE

摘要

PURPOSE: A method for manufacturing a high quality GaN substrate is provided to be capable of reducing the generation of a bending and crack phenomenon by removing the stress between a mask and an epitaxial thin film. CONSTITUTION: After forming a mask layer at the upper portion of a sapphire substrate, a mask pattern is formed by selectively etching the mask layer. A GaN epitaxial thin film is grown at the upper portion of the resultant structure by carrying out an HVPE(Hydride Vapor Phase Epitaxy). After removing the mask pattern from the resultant structure, a post-growth is sequentially carried out at the resultant structure. A free standing substrate is formed by using a laser lift-off process. Preferably, the width of the mask pattern is 3-1000μm.