| 摘要 |
PURPOSE: A structure of a high-voltage MOS transistor and a fabricating method thereof are provided to obtain a gate induced breakdown voltage of a high level by forming a field buffer layer on both sides of a bottom side of a gate electrode. CONSTITUTION: A structure of a high-voltage MOS transistor includes the first conductive type semiconductor substrate, an isolation layer, a gate electrode, a field buffer layer, the second conductive type low-density source/drain region(210), and the second conductive type high-density source/drain region(220). The isolation layer is formed on the first conductive type semiconductor substrate. The gate electrode is formed by inserting a gate insulating layer between the isolation layers. The field buffer layer is formed on both sides of a bottom side of the gate electrode. The second conductive type low-density source/drain region(210) is formed around the field buffer layer. The second conductive type high-density source/drain region(220) is formed by using the gate electrode and the field buffer layer as masks.
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