METHOD FOR REMOVING PHOTORESIST LAYER AFTER FORMING METAL LINE OF SEMICONDUCTOR DEVICE IS FORMED

摘要

PURPOSE: A method for removing a photoresist layer after a metal line of a semiconductor device is formed is provided to reduce the manufacturing cost by minimizing the generation of polymer after a tungsten metal line is formed. CONSTITUTION: A method for removing a photoresist layer includes a stabilization process and an ashing process. The stabilization process is to stabilize a photoresist layer formed on an upper surface of a tungsten wiring layer(18) by using the pressure of 9 Torr and 245 to 255 degrees centigrade under the nitrogen atmosphere of 500 to 900 SCCM in plasma equipment. The ashing process is performed by using ashing conditions of the RF power about 1000 W, the pressure about 2.0 Torr, and the temperature of 245 to 255 degrees centigrade under the nitrogen atmosphere of 500 to 750 SCCM and the oxygen atmosphere of 4500 SCCM.