| 摘要 |
PURPOSE: A CMOS image sensor is provided to improve dark current by using a channel field stop ion-implanted region elongated to a photodiode region from edge portions of a field insulating layer. CONSTITUTION: A CMOS image sensor comprises a square photodiode(101), an active region, a field insulating layer, a channel field stop ion-implanted region(300), and a gate(102) of a transfer transistor. The active region is provided with a floating diffusion region with a relatively small area compared to the photodiode(101) and a channel region for connecting the photodiode to the floating diffusion region. The channel field stop ion-implanted region(300) is formed at a lower portion of the field insulating layer and elongated to the photodiode region from edge portions of the field insulating layer.
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