| 摘要 |
PURPOSE: A method for forming a salicide contact is provided to be capable of conserving predetermined leakage characteristic and considerably improving contact resistance by forming a salicide layer at a contact region alone. CONSTITUTION: After forming an isolation layer(32) and a well at a semiconductor substrate(31), a gate(34) is formed at the upper portion of the resultant structure. A gate spacer(35) is formed at both sidewalls of the gate. A source/drain region(36) is formed at both sides of the gate in the semiconductor substrate. After forming the first interlayer dielectric(37) on the entire surface of the resultant structure, the first contact hole is formed at the first interlayer dielectric by carrying out an etching process at a salicide layer forming region. After forming a contact hole spacer(38) made of an insulating layer at both sidewalls of the first contact hole, a metal layer is formed at the upper portion of the resultant structure. Then, the first annealing process is carried out at the resultant structure. A salicide layer(39) is formed at the lower portion of the first contact hole by carrying out the second annealing process.
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