| 摘要 |
PURPOSE: A method for manufacturing a capacitor is provided to be capable of preventing the formation of a native oxide between a lower electrode and a dielectric film. CONSTITUTION: A lower electrode is formed on a semiconductor substrate(21). An HSG(Hemispherical Grain) is formed on the surface of the lower electrode(22). The surface of the lower electrode with concave and convex shape is treated by nitridation using high density plasma. Then, a dielectric film and an upper electrode are sequentially formed on the lower electrode(24,25).
|
