| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to maintain constantly the density of elements of a semiconductor substrate and reduce the non-uniformity of critical dimension due to a loading effect by forming a dummy gate electrode pattern between gate electrodes of a low-density gate electrode pattern region. CONSTITUTION: A dummy gate electrode pattern is formed on a semiconductor substrate(110) including a high-density gate electrode pattern region and a low-density gate electrode pattern region in order to form constantly the density of patterns of a gate electrode(160). The dummy gate electrode pattern is formed between the gate electrodes(160) of the low-density gate electrode pattern region. The width of a dummy gate electrode is 0.2 to 2.5 times of the width of the gate electrode.
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