| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent bridge between metal lines without degradation of a polysilicon layer as a plate electrode by using ceria-based slurry instead of silica-based slurry. CONSTITUTION: A plate electrode including a polysilicon layer(24) is formed on a desired lower layer(20). The first interlayer dielectric(25) is formed on the resultant structure. The first interlayer dielectric(25) is planarized by using ceria-based slurry and using the polysilicon layer(24) as a polishing stop layer. Then, the second interlayer dielectric(26) is formed on the entire surface of the planarized first interlayer dielectric.
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