| 摘要 |
PURPOSE: A storage node of a semiconductor device and a forming method thereof are provided to be capable of improving the degree of integration and the reliability of semiconductor device. CONSTITUTION: An isolation region is formed at a semiconductor substrate for defining an active region(400). At this time, a plurality of word line regions(500) are across the active region for forming three contact portions at the active region. The first and second storage node region are connected with the two outer contact portions out of the three contact portions. The first storage node(710) is formed at one out of the three contact portions. The second storage node(720) is formed around the first storage node for enclosing the first storage node. A storage node contact plug(600) is formed at one side of the active region.
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