发明名称 STRUCTURE MULTICOUCHE UTILISEE NOTAMMENT EN TANT QUE MATERIAU DE FORTE PERMITTIVITE
摘要 <p>High permittivity multilayer structure comprises a number of superposed layers, each of thickness less than 500 Å. The layer structure includes two layers based on a mixed oxide derived from titanium oxide (TiO 2) and tantalum pentoxide (Ta 2O 5) separated by a layer based on a mixed oxide derived from at least hafnium dioxide (HfO 2) and alumina (Al 2O 3). Preferred Features: The mixed oxide derived from at least hafnium dioxide (HfO2) and alumina (Al2O3) can also include zirconium dioxide (ZrO 2) in its composition. At least one layer situated between the layers of mixed oxide derived from titanium oxide and tantalum pentoxide and the outer part of the structure comprises a mixed oxide derived from at least two materials selected from hafnium dioxide (HfO 2), alumina (Al 2O 3), zirconium oxide (ZrO 2), titanium dioxide (TiO 2), and tantalum pentoxide (Ta 2O 5). The thickness of each layer is 1-200 Å, preferably 1-100 Å, and most preferably 1-50 Å. At least one of the external layers is alumina (Al 2O 3). Each layer is deposited by atomic layer deposition (ALD).</p>
申请公布号 FR2842830(A1) 申请公布日期 2004.01.30
申请号 FR20020009459 申请日期 2002.07.25
申请人 MEMSCAP 发明人
分类号 H01L21/02;H01L21/28;H01L21/316;H01L29/51;(IPC1-7):C23C16/40;B32B18/00 主分类号 H01L21/02
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