| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and method for processing substrate capable of speeding up the processing rate. SOLUTION: A resist denaturation processing unit (VOS) 15a for oxidating a resist film formed on a wafer W with a processing gas including vapor and ozone comprises a hermetically sealed chamber 30 housing the wafer W, a processing gas supplying unit 16 for supplying the processing gas including vapor and ozone to the chamber 30, and an exhaust unit 32 for exhausting from the chamber 30. The chamber 30 has a gas introduction port 34a for introducing the processing gas into the chamber so that the processing gas flows approximately in a horizontal direction and a gas ehxaut port 34b for exhausting the processing gas outward, and a stage 33 with proximity pins 44 for supporting the wafer W provided on its surface and an upright wall 33a formed on its rim. The upright wall 33a suppresses the flowing-in of the processing gas beneath the wafer W to effectively supply the processing gas on the surface of the wafer W, speeding up the processing rate. COPYRIGHT: (C)2004,JPO |
