| 摘要 |
PROBLEM TO BE SOLVED: To provide an ultrahigh-speed avalanche photodiode for use in a long wavelength band, low in operating voltage and in dark current, with the electric fields in the device easy to control. SOLUTION: A semi-insulating buffer layer 101, n-type semiconductor electrode layer 102, semi-insulating semiconductor avalanche multiplication layer 103, electric field control layer 104, p-type semiconductor electric field buffer layer 105, graded band gap layer 106, p-type semiconductor photoabsorption layer 107, p-type semiconductor diffusion barrier layer 108, and a p-type semiconductor electrode layer 109, are deposited in this order on a semi-insulating substrate. Dopant concentration distributions in the graded band gap layer 106 and in the electric field control layer 104 are so set that the electric field of the p-type semiconductor photoabsorption layer 107 is electrically neutral except in the region in the vicinity of the boundary with the graded band gap layer 106. COPYRIGHT: (C)2004,JPO
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