发明名称 |
APPARATUS AND METHOD FOR PLASMA PROCESSING AND FOR PLASMA FORMING FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for plasma forming a film which can maintain quality of the film on a surface of a substrate 11 uniformly irrespective of a size of the substrate 11 without a complicated constitution. SOLUTION: The apparatus for plasma forming the film includes a plasma generator 3 provided in an upper part of a film forming chamber 2 for generating a plasma 8 becoming uniform in one direction for energizing a coil-like high-frequency antenna 5. The substrate 11 is moved by a conveyor 12 in a direction crossing with a direction that the plasma becomes uniform under the plasma generator 3 so that the plasma 8 becomes uniform over the entire surface of the substrate 11, to maintain the quality of the surface of the substrate 11 uniformly irrespective of the size of the substrate 11 without the complicated constitution. COPYRIGHT: (C)2004,JPO
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申请公布号 |
JP2004031621(A) |
申请公布日期 |
2004.01.29 |
申请号 |
JP20020185526 |
申请日期 |
2002.06.26 |
申请人 |
MITSUBISHI HEAVY IND LTD |
发明人 |
SHIMAZU TADASHI;ISHII SHINYA;INOUE MASAHIKO |
分类号 |
C23C16/507;C23C16/54;H01L21/205;(IPC1-7):H01L21/205 |
主分类号 |
C23C16/507 |
代理机构 |
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地址 |
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