| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a Cat-plasma enhanced chemical vapor deposition (PECVD) method through which a film having high uniformity in film thickness and film quality can be formed with high productivity, and to provide a film formed through the above method, a thin film device using the film, and a film processing system. <P>SOLUTION: This Cat-PECVD method a method in which is material gases containing Si and/or C in their molecular formulas, and non-Si/non-C gases which are heated by a thermal catalyst and contain no Si/no C in their molecular formulas, are jetted out into a film forming space from a plurality of gas exhaust nozzles provided to the hollow parts of a firs and a second gas introduction tubes, passing through the hollow parts of the first and second gas introduction tubes each equipped with a hollow structure as the material gases pass through the first gas introduction tube serving also as an antenna electrode and the non-Si/non-C gases pass through the second gas introduction tube. The gases jetted into the film forming space and mixed together are made to deposit the film on a substrate by the use of plasma produced by the first gas introduction tube connected to a high-frequency power supply. <P>COPYRIGHT: (C)2004,JPO</p> |
