| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a Cat-plasma enhanced chemical vapor deposition method (PECVD) method through which a film having high uniformity in film thickness and film quality can be formed, and to provide a film formed through the above method, a thin film device using the film, and a film processing system. <P>SOLUTION: This Cat-PECVD method is a method in which material gases including gas which contains Si and/or C in its molecular formula, and non-Si/non-C gases which are heated by a thermal catalyst and composed of gases that contain no Si/no C, are jetted out into a film forming space as kept separate from each other from a plurality of gas exhaust nozzles provided to the hollow part of a tubular antenna electrode equipped with a hollow structure, passing through the hollow part of the tubular antenna electrode installed in the film forming space in a film forming chamber. The gases jetted into the film forming space and mixed together are decomposed and activated by plasma produced with the antenna electrode connected to a high-frequency power supply so as to deposit the film on a substrate which is arranged as confronting the antenna electrode. A gas exhaust vent fitted to the film forming chamber is provided on the wall surface of the film forming chamber located in the lengthwise direction of the antenna electrode. <P>COPYRIGHT: (C)2004,JPO</p> |
