| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for high quality crystallization of a semiconductor film, wherein energy beams which have been passed through a slit of a mask are condensed by means of a projection lens and are irradiated on the semiconductor thin film formed on a glass substrate. SOLUTION: Crystallization equipment comprises a stage 11 which is movable two-dimensionally (in X and Y directions), a glass substrate 1 sucked by vacuum on the stage 11, stage movement control section 12 for controlling the movement of the stage 11, source of laser light 13 which emits excimer laser light, refraction optical system 14 which refracts the excimer laser light, mask 16 formed with a slit 15, lens 17 which condenses the laser light which has been passed through the slit 15 of the mask 16, and focus adjustment section 18 for adjusting a focus of the lens 17. The mask 16 is formed with the slender slit 15. The slit 15 is so positioned that a longitudinal direction of the slit 15 may be nearly orthogonally crossing a sweeping direction at the time of forming the glass substrate 1, and the stage 11 is moved nearly in parallel with the sweeping direction at the time of forming the glass substrate 1. Consequently, focus adjustment of the laser light can be performed over the whole surface of the glass substrate 1 without any influence by an unevenness of the glass substrate 1. COPYRIGHT: (C)2004,JPO
|
