| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus 1 for plasma forming a film which can manufacture anα-Si film having a simple and low-cost constitution and containing a lowered content of oxygen. SOLUTION: The apparatus 1 for plasma forming the film includes a high-frequency antenna 17 for supplying a radio frequency power to a film forming chamber 3 containing a substrate 6, a gas supply nozzle 21 for supplying an SiH<SB>4</SB>gas to the forming chamber 3, and a hydrogen supply nozzle 22 for supplying hydrogen to the forming chamber 3. The apparatus 1 generates a plasma 20 in the chamber 3 by supplying the radio frequency power from the antenna 17, manufactures theα-Si film on the substrate 6 in a state in which an oxygen content is lowered by reacting the hydrogen with an oxygen, and manufactures theα-Si film in which the oxygen content is lowered with a simple and low-cost constitution. COPYRIGHT: (C)2004,JPO
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