| 摘要 |
PROBLEM TO BE SOLVED: To provide a magetoresistive element which has excellent magnetic characteristics, and to provide a magnetic memory device which uses the magnetoresistive element and has excellent write/read characteristics. SOLUTION: In this magnetoresistive element 1, a pair of ferromagnetic layers (a pinned magnetic layer 5 and a free magnetic layer 7) face each other with an intermediate layer 6 in between them, and magnetoresistance is varied by an electric current in the direction vertical to layer surfaces. The free magnetic layer 7 is composed of a ferromagnetic material containing FeCoB or FeCoNiB, and has a thickness of≥2 nm and≤8 nm. The magnetic memory device comprises magnetoresistive element 1, and bit lines and word lines that sandwich the magnetoresistive element 1 in the direction of thickness. COPYRIGHT: (C)2004,JPO
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