| 摘要 |
PROBLEM TO BE SOLVED: To effectively prevent characteristic deterioration of an element due to diffusion of a dopant by forming a carbon planar doped layer having a sharp impurity distribution in the vertical direction. SOLUTION: A spacer layer (105) and a Schottky junction forming layer (107) for forming a portion of a barrier layer are formed of an undoped compound semiconductor layer (InP, GaP, AlP, etc.) including P as a component element, and the carbon planar doped layer (106) is formed in the surface of the spacer layer (105) which has contact with the Schottky junction forming layer (107). COPYRIGHT: (C)2004,JPO
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