| 摘要 |
Low-side switching devices (1A, 1B) and high-side switching devices (2A, 2B) are insulated gate bipolar transistors, to which clamp diodes (3A, 3B, 4A, 4B) are connected in parallel, respectively. Driving circuits and protection circuits have power lines along two paths: a power line (A) connected to a ground line (G) through power by-pass capacitors (14A, 14B); and a power line (B) connected to the ground line (G) through power by-pass capacitors (15A, 15B). Resistors (16A, 16B) are provided on the power line (A) between a power source (13) and the driving circuits, respectively.
|
